2db1184q document number: ds31504 rev. 4 - 2 1 of 6 www.diodes.com june 2011 ? diodes incorporated 2db1184q 50v pnp surface mount t ransistor in to252-3l features ? epitaxial planar die construction ? low collector-emitter saturation voltage ? ideally suited for automated assembly processes ? ideal for medium power switching or amplification applications ? ?lead free?, rohs compliant (note 1) ? halogen and antimony free. "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: to252-3l ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte ti n annealed over copper leadframe (lead free plating). solderable per mil-std-202, method 208 ? weight: 0.34 grams (approximate) ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel 2DB1184Q-13 2db1184q 13 16 2,500 notes: 1. no purposefully added lead 2. diodes inc's "green" policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information 2db1184q = product type marking code = manufacturers? code marking yyww = date code marking yy = last digit of year, (ex: 08 = 2008) ww = week code 01-52 yyww 2db1184q top view device schematic pin out configuration top view to252-3l c e b
2db1184q document number: ds31504 rev. 4 - 2 2 of 6 www.diodes.com june 2011 ? diodes incorporated 2db1184q maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v continuous collector current i c -3 a peak pulse collector current i cm -4.5 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation p d 15 w thermal resistance, junction to case r jc 8.3 c/w power dissipation (note 4) p d 1.2 w thermal resistance, junction to ambient r ja 104 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 4. device mounted on fr-4 pcb with minimum pad size recommended. electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) collector-base breakdown voltage bv cbo -60 v i c = -50 p a, i e = 0 collector-emitter breakdown voltage bv ceo -50 v i c = -1ma, i b = 0 emitter-base breakdown voltage bv ebo -5 v i e = -50 p a, i c = 0 collector cutoff current i cbo -1 p a v cb = -40v, i e = 0 emitter cutoff current i ebo -1 p a v eb = - 4v, i c = 0 on characteristics (note 5) collector-emitter saturation voltage v ce ( sat ) -1 v i c = -2a, i b = -0.2a base-emitter saturation voltage v be ( sat ) -1.2 v i c = -1.5a, i b = -0.15a dc current gain h fe 120 270 v ce = -3v, i c = -0.5a small signal characteristics current gain-bandwidth product f t 110 mhz v ce = -5v, i c = -0.1a, f = 30mhz output capacitance c obo 26 pf v cb = -10v, f = 1mhz notes: 5. measured under pulsed conditions. pulse width = 300 p s. duty cycle d 2%.
2db1184q document number: ds31504 rev. 4 - 2 3 of 6 www.diodes.com june 2011 ? diodes incorporated 2db1184q 0 200 400 600 800 1,000 0.1 1 10 fig. 1 typical collector current vs. collector-emitter voltage -v , collector-emitter voltage (v) ce -i , c o lle c t o r c u r r e n t (ma) c i = -1ma b i = -2ma b i = -3ma b i = -4ma b i = -5ma b 0 50 100 150 200 250 300 350 400 0.001 0.01 0.1 1 10 fig. 2 typical dc current gain vs. collector current -i , collector current (a) c h, d c c u r r en t g ain fe t = -55c a t = 25c a t = 85c a t = 150c a t = 125c a v = -3v ce 0 0.1 0.2 0.3 0.4 0.001 0.01 0.1 1 10 fig. 3 typical collector-emitter saturation voltage vs. collector current -i , collector current (a) c -v , c o lle c t o r -emi t t e r saturation voltage (v) ce(sat) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a i/i = 10 cb 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 -i , collector current (a) fig. 4 typical base-emitter turn-on voltage vs. collector current c -v , base-emi t t e r t u r n- o n v o l t a g e (v) be(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -3v ce 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 fig. 5 typical base-emitter saturation voltage vs. collector current -i , collector current (a) c -v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) t = -55c a t = 25c a t = 150c a t = 125c a t = 85c a i/i = 10 cb 10 100 1,000 0.1 1 10 100 fig. 6 typical capacitance characteristics v , reverse voltage (v) r capacitance (pf) c ibo c obo f = 1mhz
2db1184q document number: ds31504 rev. 4 - 2 4 of 6 www.diodes.com june 2011 ? diodes incorporated 2db1184q 0 20 40 60 80 100 120 140 0102030405060708090100 i , collector current (ma) c f , gain-bandwidth product (mhz) t fig. 7 typical gain-bandwidth product vs. collector current v = -5v ce f = 30mhz 0.01 0.1 1 10 0.1 1 10 100 v , collector-emitter voltage (v) ce i, c o lle c t o r c u r r e n t (a) c fig. 8 safe operating area (note 3) t = 25c single non-repetitive pulse a dc (ma) pw = 100ms (ma) pw = 10ms (ma) pw = 1ms (ma) pw = 100s (ma) 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000 fig. 9 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 110c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9
2db1184q document number: ds31504 rev. 4 - 2 5 of 6 www.diodes.com june 2011 ? diodes incorporated 2db1184q package outline dimensions suggested pad layout to252-3l dim min typ max a 2.19 2.29 2.39 a1 0.97 1.07 1.17 b 0.64 0.76 0.88 b2 0.76 0.95 1.14 b3 5.21 5.33 5.50 c2 0.45 0.51 0.58 d 6.00 6.10 6.20 e 6.45 6.58 6.70 e 2.286 typ. h 9.40 9.91 10.41 l 1.40 1.59 1.78 l3 0.88 1.08 1.27 l4 0.64 0.83 1.02 a 0 - 10 all dimensions in mm dimensions value (in mm) z 11.6 x1 1.5 x2 7.0 y1 2.5 y2 7.0 c 6.9 e1 2.3 e b2 seating plane l a c2 l4 b3 d e a1 l3 h b a x2 c z x1 y1 e1 y2
2db1184q document number: ds31504 rev. 4 - 2 6 of 6 www.diodes.com june 2011 ? diodes incorporated 2db1184q important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com
|
